Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor (Adv. Electron. Mater. 11/2022)

Nonvolatile Logic-in-Memory Computing In article number 2200089, Chunxiang Zhu and co-workers propose demonstrate an electrochemical metallization memristor based on a solution-processed Pt/CuI/Cu structure. Owing to the efficient drift paths provided by Cu vacancies for cations in CuI, very small operating voltages are realized, contributing ultralow power consumption. Using CuI arrays, set of Boolean logic operations half adder implemented.